Graphene FET-based zero-bias RF to millimeter-wave detection

IEEE Electron Device Letters

Volumn 33, Issue 10, 2012, Pages 1357-1359

  Moon, J S ^a   Seo, H C ^a   Antcliffe, M ^a   Lin, S ^a   McGuire, C ^a   Le, D ^a   Nyakiti, L O ^b   Gaskill, D K ^b   Campbell, P M ^b   Lee, K M ^c   Asbeck, P ^c  

^a Hughes Aircraft Co   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Energy harvesting; field effect transistor (FET); graphene; millimeter wave; power detector; radio frequency identification (RFID); rectification

Indexed keywords

CHANNEL RESISTANCE; CMOS DETECTORS; DC BIAS; EPITAXIAL GRAPHENE; LINEAR DYNAMIC RANGES; NOISE EQUIVALENT POWER; NOISE POWER; NON-LINEARITY; POWER DETECTORS; RADIO FREQUENCIES; RECTIFICATION; RESPONSIVITY; RF DETECTORS; TRANSISTOR LEVEL; ZERO-BIAS;

CMOS INTEGRATED CIRCUITS; DETECTORS; ELECTRIC RECTIFIERS; ENERGY HARVESTING; FIELD EFFECT TRANSISTORS; MILLIMETER WAVES; RADIO FREQUENCY IDENTIFICATION (RFID); SIGNAL DETECTION;

GRAPHENE;

EID: 84866916137     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2210184     Document Type: Article

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