Low noise amplification at 0.67 THz using 30 nm InP HEMTs

IEEE Microwave and Wireless Components Letters

Volumn 21, Issue 7, 2011, Pages 368-370

  Deal, William R ^a   Leong, K ^a   Radisic, V ^a   Sarkozy, S ^a   Gorospe, B ^a   Lee, J ^a   Liu, P H ^a   Yoshida, W ^a   Zhou, J ^a   Lange, M ^a   Lai, R ^a   Mei, X B ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Coplanar waveguide (CPW); high electron mobility transistor (HEMT); low noise amplifier (LNA); millimeter wave (MM Wave); monolithic microwave integrated circuit (MMIC); sub millimeter wave

Indexed keywords

ASSOCIATED GAIN; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); INP; INP HEMT; LOW NOISE AMPLIFIER (LNA); LOW-NOISE AMPLIFICATION; MILLIMETER-WAVE (MM-WAVE); PEAK GAIN; SUBMILLIMETERS; TERA HERTZ;

AMPLIFICATION; COPLANAR WAVEGUIDES; ELECTRON MOBILITY; INTEGRATED CIRCUITS; INTEGRATION; LOW NOISE AMPLIFIERS; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; TERAHERTZ WAVES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79960142082     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2011.2143701     Document Type: Article

References (7)

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