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Volumn 104, Issue 1, 2014, Pages

Microwave noise characterization of graphene field effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION GRAPHENE; GATE LENGTH SCALING; GRAPHENE FIELD EFFECT TRANSISTOR (GFETS); GRAPHENE FIELD-EFFECT TRANSISTORS; MICROWAVE NOISE; NOISE PROPERTIES; NOISE TEMPERATURE; PARASITIC NOISE;

EID: 84892142352     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4861115     Document Type: Article
Times cited : (31)

References (27)
  • 26
    • 77957707136 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.82.115452
    • A. Konar, T. Fang, and D. Jena, Phys. Rev. B 82, 115452 (2010). 10.1103/PhysRevB.82.115452
    • (2010) Phys. Rev. B , vol.82 , pp. 115452
    • Konar, A.1    Fang, T.2    Jena, D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.