Delay analysis of graphene field-effect transistors

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 324-326

  Wang, Han ^a   Hsu, Allen ^a   Lee, Dong Seup ^a   Kim, Ki Kang ^a   Kong, Jing ^a   Palacios, Tomas ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Carrier velocity; chemical vapor deposition graphene; delay analysis; graphene FET (GFET); sapphire

Indexed keywords

CARRIER VELOCITY; DELAY ANALYSIS; EXPERIMENTAL DATA; INTRINSIC DELAY; PARASITIC COMPONENTS; TRANSIT DELAYS;

CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; SAPPHIRE;

GRAPHENE;

EID: 84862815077     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2180886     Document Type: Article

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