High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor

Applied Physics Letters

Volumn 100, Issue 1, 2012, Pages

  Sun, J D ^a,b,c   Sun, Y F ^a   Wu, D M ^a   Cai, Y ^a   Qin, H ^a   Zhang, B S ^a  

^a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^b INSTITUTE OF PHYSICS   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ELECTRON CHANNEL; LOW NOISE; NANO-METER-SCALE; RESPONSIVITY; ROOM TEMPERATURE; SELF-MIXING; SOURCE AND DRAINS; TERAHERTZ DETECTORS; TERAHERTZ RADIATION; THERMAL LIMITS;

ANTENNAS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; PHOTOLITHOGRAPHY;

TERAHERTZ WAVES;

EID: 84862908146     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3673617     Document Type: Article

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