Exploration of terahertz imaging with silicon MOSFETs

Journal of Infrared, Millimeter, and Terahertz Waves

Volumn 35, Issue 1, 2014, Pages 63-80

  Lisauskas, Alvydas ^a,b   Bauer, Maris ^a   Boppel, Sebastian ^a   Mundt, Martin ^a   Khamaisi, Bassam ^b   Socher, Eran ^c   Venckevičius, Rimvydas ^d   Minkevičius, Linas ^d   Kašalynas, Irmantas ^d   Seliuta, Dalius ^d   Valušis, Gintaras ^d   Krozer, Viktor ^a   Roskos, Hartmut G ^a  

^a GOETHE UNIVERSITY   (Germany)

^b VILNIUS UNIVERSITY   (Lithuania)

^c TEL AVIV UNIVERSITY   (Israel)

^d CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

Heterodyne detection; Silicon CMOS circuits; Terahertz emitters and detectors; Terahertz imaging

Indexed keywords

ANTENNAS; DETECTORS; ELECTRON GAS; HETERODYNING; MOSFET DEVICES; PIXELS; SILICON; TRANSIT TIME DEVICES;

EFFICIENT DETECTION; ENHANCED SENSITIVITY; FREQUENCY MULTIPLICATION; HETERODYNE DETECTION; REAL-TIME OPERATION; SILICON CMOS; TERAHERTZ EMITTERS; TERAHERTZ IMAGING;

CMOS INTEGRATED CIRCUITS;

EID: 84899420228     PISSN: 18666892     EISSN: 18666906     Source Type: Journal    
DOI: 10.1007/s10762-013-0047-7     Document Type: Article

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