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Journal of Applied Physics

Volumn 111, Issue 2, 2012, Pages

An improved model for non-resonant terahertz detection in field-effect transistors

(6) Preu, S a,b Kim, S c Verma, R c Burke, P G b Sherwin, M S a Gossard, A C b

a UNIVERSITY OF CALIFORNIA (United States)

b University of California (United States)

c Tanner Research Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENTS AND VOLTAGES; LOCAL OSCILLATOR POWER; LUMPED ELEMENT DEVICES; NOISE EQUIVALENT POWER; TERAHERTZ DETECTION; TERAHERTZ DETECTORS; TRANSISTOR PARAMETERS; TRANSMISSION LINE MODELS;

CIRCUIT THEORY; DETECTORS; DIFFERENTIAL EQUATIONS; ELECTRON GAS; ELECTRON RESONANCE; FIELD EFFECT TRANSISTORS; LUMPED PARAMETER NETWORKS; MIXING;

SIGNAL DETECTION;

EID: 84861189301 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3676211 Document Type: Article

Times cited : (80)

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