Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects

Journal of Applied Physics

Volumn 110, Issue 5, 2011, Pages

  Sakowicz, M ^a,e   Lifshits, M B ^a,b   Klimenko, O A ^a,c   Schuster, F ^a,d   Coquillat, D ^a   Teppe, F ^a   Knap, W ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b IOFFE INSTITUTE   (Russian Federation)

^c LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^d CEA LETI   (France)

^e UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODEL; DENSITY PERTURBATION; ELECTRICAL SIMULATION; GAAS; LOADING EFFECTS; LOW COSTS; MODULATION FREQUENCIES; NON-RESONANT DETECTION; NONRESONANT; OPTIMAL INTEGRATION; PHOTOVOLTAIC RESPONSE; PHYSICAL MODEL; READ-OUT CIRCUIT; RESISTIVE COUPLINGS; RESPONSIVITY; SILICON-BASED TRANSISTORS; STATIC CHANNELS; TERA HERTZ; TERAHERTZ IMAGING; TERAHERTZ RADIATION; TRANSISTOR CHANNELS; TRANSISTOR CHARACTERISTICS;

DETECTORS; ELECTROMAGNETIC WAVE EMISSION; FOCUSING; GALLIUM NITRIDE; LOADING; MATHEMATICAL MODELS; PHOTOVOLTAIC EFFECTS; PLASMA DENSITY; RADIATION EFFECTS; TERAHERTZ WAVES; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 80052933413     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3632058     Document Type: Conference Paper

References (22)

1. J.-Q. Lu, M. S. Shur, J. L. Hasler, L. Sun, and R. Weikle, IEEE Electron Device Lett. 19, 373 (1998). 10.1109/55.720190
2. J.-Q. Lu and M. S. Shur, Appl. Phys. Lett. 78, 2587 (2001). 10.1063/1.1367289
3. W. Knap, Y. Deng, S. Rumyantsev, and M. S. Shur, Appl. Phys. Lett. 81, 4637 (2002). 10.1063/1.1525851
4. W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lu, R. Gaska, M. S. Shur, G. Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel, J. Appl. Phys. 91, 9346 (2002). 10.1063/1.1468257
5. W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lu, M. S. Shur, C. A. Saylor, and L. C. Brunel, Appl. Phys. Lett. 80, 3433 (2002). 10.1063/1.1473685
6. W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. usakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M.S. Shur, Appl. Phys. Lett. 85, 675 (2004). 10.1063/1.1775034
7. F. Teppe, W. Knap, D. Veksler, M. S. Shur, A. P. Dmitriev, V. Yu. Kachorovskii, and S. Rumyantsev, Appl. Phys. Lett. 87, 052107 (2005). 10.1063/1.2005394
8. R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev, and M. S. Shur, Appl. Phys. Lett. 89, 253511 (2006). 10.1063/1.2410215
9. A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valuis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, and S. Rumyantsev, Appl. Phys. Lett. 89, 131926 (2006). 10.1063/1.2358816
10. A. El Fatimy, N. Dyakonova, F. Teppe, W. Knap, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. B. Veksler, S. Rumyantsev, M. S. Shur, D. Seliuta, G. Valusis, S. Bollaert, A. Shchepetov, Y. Roelens, C. Gaquiere, D. Theron, and A. Cappy, Electron. Lett. 42, 1342 (2006). 10.1049/el:20062452
11. W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valuis, D. Seliuta, I. Kaalynas, A. El Fatimy, Y. M. Meziani, and T. Otsuji, J. Infrared Millim. Terahz. Waves 30, 1319 (2009).
12. W. Knap, H. Videlier, S. Nadar, D. Coquillat, N. Dyakonova, F. Teppe, M. Bialek, M. Grynberg, K. Karpierz, J. Lusakowski, K. Nogajewski, D. Seliuta, I. Kaalynas, and G. Valuis, Opto-Electron. Rev. 18, 225 (2010). 10.2478/s11772-010-1018-7
13. M. Dyakonov and M. Shur, Phys. Rev. Lett. 71, 2465 (1993). 10.1103/PhysRevLett.71.2465
14. M. Dyakonov and M. Shur, IEEE Trans. Electron Devices 43, 380 (1996). 10.1109/16.485650
15. A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Dyakonova, W. Knap, and H. G. Roskos, Electron. Lett. 44, 408 (2008). 10.1049/el:20080172
16. A. Lisauskas, U. Pfeiffer, E. jefors, P. H. Bolvar, D. Glaab, and H. G. Roskos, J. Appl. Phys. 105, 114511 (2009). 10.1063/1.3140611
17. E. jefors, U. R. Pfeiffer, A. Lisauskas, and H. G. Roskos, IEEE J. Solid-State Circuits 44, 1968 (2009). 10.1109/JSSC.2009.2021911
18. E. Ojefors, N. Baktash, Y. Zhao, and U. Pfeiffer, Terahertz imaging detectors in a 65-nm CMOS SOI technology., in 36th European Solid-State Circuits Conference (Sevilla, Spain, 2010).
19. W. Stillman, M. S. Shur, D. Veksler, S. Rumyantsev, and F. Guarin, Electron. Lett. 43, 422 (2007). 10.1049/el:20073475
20. A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquiere, M. A. Poisson, S. Delage, P. Prystawko, and C. Skierbiszewski, J. Appl. Phys. 107, 024504 (2010). 10.1063/1.3291101
21. S. Nadar, H. Videlier, D. Coquillat, F. Teppe, M. Sakowicz, N. Dyakonova, W. Knap, D. Seliuta, I. Kaalynas, and G. Valuis, J. Appl. Phys. 108, 054508 (2010). 10.1063/1.3463414
22. F. Schuster, D. Coquillat, H. Videlier, M. Sakowicz, F. Teppe, L. Dussopt, B. Giffard, T. Skotnicki, and W. Knap, Opt. Express 19, 7827 (2011). 10.1364/OE.19.007827