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Applied Surface Science

Volumn 351, Issue , 2015, Pages 824-830

Growth of c-plane ZnO on γ-LiAlO 2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

(8) Yan, T a,e Lu, C Y J a Schuber, R b Chang, L a Schaadt, D M b,c Chou, M M C a Ploog, K H a Chiang, C M d

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b KARLSRUHE INSTITUTE OF TECHNOLOGY (Germany)

c Clausthal Technical Univ (Germany)

d NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

e FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER (China)

Author keywords

68.37.Hk; 68.37.Lp; 68.37.Ps; 78.55.Et; PACS 81.15.Hi

Indexed keywords

BUFFER LAYERS; EPILAYERS; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; LITHIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SCREW DISLOCATIONS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

68.37.HK; 68.37.LP; 68.37.PS; 78.55.ET; NEAR BAND EDGE EMISSIONS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; RECIPROCAL SPACE MAPS; THREADING DISLOCATION DENSITIES;

ALUMINUM COMPOUNDS;

EID: 84964510443 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2015.06.011 Document Type: Article

Times cited : (10)

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