Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

Optical Materials Express

Volumn 1, Issue 8, 2011, Pages 1555-1560

  Chen, C W ^a   Hung, S C ^a   Lee, C H ^b   Tun, C J ^a   Kuo, C H ^b   Yang, M D ^c   Yeh, C W ^c   Wu, C H ^c   Chi, G C ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DIODES; ELECTRIC RESISTANCE; ELECTROLUMINESCENCE; LIGHT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITION; ZINC OXIDE; GALLIUM NITRIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; OXIDE MINERALS;

DIRECT CURRENT; DRIVE CURRENTS; FORWARD VOLTAGE; FULL WIDTH OF HALF MAXIMUM; GAN TEMPLATE; NON-POLAR; PEAK POSITION; SERIES RESISTANCES;

LIGHT EMITTING DIODES;

EID: 84862202412     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.1.001555     Document Type: Article

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