Improved quality of nonpolar m-plane GaN [10̄10] on LiAlO2 substrate using a modified chemical vapor deposition

Journal of Applied Physics

Volumn 107, Issue 1, 2010, Pages

  Chou, Mitch M C ^a   Hang, Da Ren ^a   Chang, Liuwen ^a   Chen, Chenlong ^a   Yang, Wen Fu ^a   Li, Chu An ^a   Wu, Jih Jen ^b  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; CHEMICAL VAPOR DEPOSITION REACTORS; CVD REACTORS; DEFECT ANALYSIS; GAN FILM; INNER STRUCTURE; LATTICE-MATCHED; LOW TEMPERATURE PHOTOLUMINESCENCE; MODIFIED CHEMICAL VAPOR DEPOSITIONS; NEUTRAL DONOR; NON-POLAR GAN; NONPOLAR M-PLANE; STRUCTURAL CHARACTERIZATION; TRANSMISSION ELECTRON MICROSCOPE; YELLOW LUMINESCENCE;

ELECTRON MICROSCOPES; FILM GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT; LITHIUM ALLOYS; RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICAL VAPOR DEPOSITION;

EID: 75649102818     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3273493     Document Type: Article

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