Homoepitaxial growth of high-quality nonpolar ZnO films by MOCVD and evaluation of the homoepitaxial ZnO films by XRD measurement for asymmetric planes

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 5, 2009, Pages 944-947

  Kashiwaba, Yasuhiro ^a   Abe, Takami ^b   Nakagawa, Akira ^b   Endo, Haruyuki ^c   Niikura, Ikuo ^b   Kashiwaba, Yasube ^b  

^a SENDAI NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b IWATE UNIVERSITY   (Japan)

^c IWATE INDUSTRIAL RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITY; HIGH QUALITY; HOMOEPITAXIAL; HOMOEPITAXIAL GROWTH; MEASUREMENT METHODS; METAL ORGANIC; MOCVD; NEAR BAND EDGE EMISSIONS; NON-POLAR; OXYGEN GAS; OXYGEN GAS FLOW; PHOTOLUMINESCENCE SPECTRUM; X RAY ROCKING CURVE; XRD MEASUREMENTS; ZINC ACETYLACETONATE; ZNO; ZNO FILMS;

AERODYNAMICS; CHEMICAL VAPOR DEPOSITION; COMMUNICATION CHANNELS (INFORMATION THEORY); EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; FLOW OF GASES; FLOW RATE; GASES; LEAKAGE (FLUID); METALLIC FILMS; ORGANIC CHEMICALS; ORGANOMETALLICS; OXYGEN; PLASMAS; SINGLE CRYSTALS; ZINC; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 65649086401     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200881305     Document Type: Article

References (13)

1. D. C. Look, Mater. Sci. Eng. B 80, 383 (2001).
2. A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Ya- suda, and Y. Segawa, Appl. Phys. Lett. 75, 980 (1999).
3. K. Iwata, A. Yamada, P. Fons, K. Matsubara, and S. Niki, J. Cryst. Growth 251, 633 (2003).
4. A. V. Thompson, C. Boutwell, J. W. Mares, W. V. Schoenfeld, A. Osinsky, B. Hertog, J. Q. Xie, S. J. Pearton, and D. P. Norton, Appl. Phys. Lett. 91, 201921 (2007).
5. C. Morhain, T. Bretagnon, P. Lefebvre, X. Tang, P. Valvin, T. Guillet, B. Gil, T. Taliercio, M. Teisseire-Doninelli, B. Vinter, and C. Deparis, Phys. Rev. B 72, 241305-241311 (2005).
6. S. K. Han, S. K. Hong, J. W. Lee, J. Y. Lee, J. H. Song, Y. S. Nam, S. K. Chang, T. Minegishi, and T. Yao, J. Cryst. Growth 309, 121 (2007).
7. M.-H. Liang, Y.-T. Ho, W.-L. Wang, C.-Y. Peng, and Li Chang, J. Cryst. Growth 310, 1847 (2008).
8. C. R. Gorla, N. W. Emanetoglu, S. Liang, W. E. Mayo, Y. Liu, M. Wraback, and H. Shen, J. Appl. Phys. 85, 2595 (1999).
9. Y. Kashiwaba, H. Kato, T. Kikuchi, I. Niikura, K. Matsu- shita, and Y. Kashiwaba, Appl. Surf. Sci. 244, 373 (2005).
10. J. M. Pierce, B. T. Adekore, R. F. Davis, and F. A. Stevie, J. Cryst. Growth 283, 147 (2005).
11. T. Minami, H. Sonohara, S. Takata, and H. Sato, Jpn. J. Appl. Phys. 33, L743 (1994).
12. K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. 79, 7983 (1996).
13. D. M. Bagnall, Y. F. Chen, M. Y. Shen, Z. Zhu, T. Goto, and T. Yao, J. Cryst. Growth 184/185, 605 (1998).