Growth behavior and microstructure of ZnO epilayer on γ-LiAlO 2(100) substrate by chemical vapor deposition

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 2, 2009, Pages 215-219

  Chang, Liuwen ^a   Chou, Mitch M C ^a   Hwang, Teng Hsing ^a   Chen, Chun Wei ^b  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AZIMUTHAL ORIENTATIONS; GROWTH BEHAVIORS; LATTICE-MATCHED; LATTICE-MISMATCHED; LOW GROWTH TEMPERATURES; SINGLE-CRYSTALLINE; ZNO; ZNO EPITAXIAL FILMS; ZNO FILMS;

CHEMICAL VAPOR DEPOSITION; CRYSTALLITES; EPITAXIAL FILMS; FILM GROWTH; GROWTH TEMPERATURE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; VAPORS; ZINC OXIDE;

SUBSTRATES;

EID: 62549150328     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200880412     Document Type: Conference Paper

References (22)

1. D. M. Bagnall, Y. F. Chen, Z. Zhu, and T. Yao, S. Koyama, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230 (1997).
2. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, Nature Mater. 4, 42 (2005).
3. S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, Appl. Phys. Lett. 70, 420 (1997).
4. T. Hino, S. Tomiya, T. Miyajimam, S. Hashimoto, and M. Ikeda, Appl. Phys. Lett. 76, 3421 (2000).
5. J. Y. Shi, L. P. Yu, Y. Z. Wang, and H. Zhang, Appl. Phys. Lett. 80, 2293 (2002).
6. J. Dai, H. Liu, W. Fang, L. Wang, Y. Pu, Y. Chen, and F. Jiang, J. Cryst. Growth 283, 93 (2005).
7. K. Nakamura, T. Shoji, and H. B. Kang, Jpn. J. Appl. Phys. 39, L534 (2000).
8. G. H., Lee, Solid State Commun. 128, 351 (2003).
9. J. Zou, S. Zhou, C. Xia, Y. Hang, J. Xu, S. Gu, and R. Zhang, J. Cryst. Growth 280, 185 (2005).
10. M. M. C. Chou, L. Chang, H.-Y. Chung, T.-H. Huang, J.-J. Wu, and C.-W. Chen, J. Cryst. Growth 308, 412 (2007).
11. A. Ohtomo, K. Tamura, K. Saikusa, K. Takahashi, T. Makino, Y. Segawa, H. Koinuma, and M. Kawasaki, Appl. Phys. Lett. 75, 2635 (1999).
12. K. Tamura, A. Ohtomo, K. Saikusa, Y. Osaka, T. Makino, Y. Segawa, M. Sumiya, S. Fuke, H. Koinuma, and M. Kawasaki, J. Cryst. Growth 214/215, 59 (2000).
13. K. Xu, J. Xu, P. Deng, R. Qiu, and Z. Fang, Phys. Status Solidi A 176, 589 (1999).
14. M. M. C. Chou, S. J. Huang, and C. W. C. Hsu, J. Cryst. Growth 203, 585 (2007).
15. M. M. C. Chou, H. C. Huang, D. S. Gan, and C. W. C. Hsu, J. Cryst. Growth 291, 485 (2006).
16. 2 heterostructures, Ph.D. thesis, Humboldt-University at Berlin (2004).
17. M. M. C. Chou, L. Chang, C. Chen, D.-S. Chang, C.-A. Li, J.-J. Wu, and C.-W. Chen, Cryst. Growth Des., submitted (2008).
18. Y. J. Sun, O. Brandt, U. Jahn, T. Y. Liu, A. Trampert, S. Cronenberg, S. Dhar, and K. H. Ploog, J. Appl. Phys. 92, 5714 (2002).
19. R. R. Vanfleet and J. A. Simmons, H. P. Maruska, D. W. Hill, M. M. C. Chou, and B. H. Chai, Appl. Phys. Lett. 83, 1139 (2003).
20. T. Y. Liu, A. Tramperty, Y. J. Sun, O. Brandt, and K. H. Ploog, Philos. Mag. Lett. 84, 435 (2004).
21. J. W. Gerlach, A. Hofmann, T. Höche, F. Frost, B. Rauschenbach, and G. Benndorf, Appl. Phys. Lett. 88, 011902 (2006).
22. E. S. Hellman, Z. Liliental-Weber, and D. N. E. Buchanan, MRS Internet J. Nitride Semicond. Res. 2, 30 (1999).