Control and characterization of ZnO/GaN heterointerfaces in plasma-assisted MBE-grown ZnO films on GaN/Al2O3

Applied Surface Science

Volumn 159, Issue , 2000, Pages 441-448

  Hong, Soon Ku ^a   Ko, Hang Ju ^a   Chen, Yefan ^a   Hanada, Takashi ^a   Yao, Takafumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

SOLID PHASE EPITAXY; WIDE BAND GAP SEMICONDUCTORS;

HETEROJUNCTIONS;

EID: 0034205903     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00053-2     Document Type: Article

References (24)

1. Bagnall D.M., Chen Y.F., Zhu Z., Yao T., Koyama S., Shen M.Y., Goto T. Appl. Phys. Lett. 70:1997;2230.
2. Tang Z.K., Wong G.K.L., Yu P., Kawasaki M., Ohotomo A., Koinuma H., Segawa Y. Appl. Phys. Lett. 72:1998;3270.
3. Bagnall D.M., Chen Y.F., Zhu Z., Yao T., Shen M.Y., Goto T. Appl. Phys. Lett. 73:1998;1038.
4. Chen Y., Bagnall D.M., Zhu Z., Sekiuchi T., Park K.T., Hiraga K., Yao T., Koyama S., Shen M.Y., Goto T. J. Cryst. Growth. 181:1997;165.
5. Chen Y., Bagnall D.M., Ko H.J., Park K.T., Hiraga K., Zhu Z., Yao T. J. Appl. Phys. 84:1998;3912.
6. Sverdlov B.N., Martin G.A., Morkoc H., Smith D.J. Appl. Phys. Lett. 67:1995;2063.
7. Romano L.T., Northrup J.E., O'Keefe M.A. Appl. Phys. Lett. 69:1996;2394.
8. Detchprohm T., Hiramatsu K., Amano H., Akasaki I. Appl. Phys. Lett. 61:1992;2688.
9. Hellman E.S., Buchanan D.N.E., Wiesmann D., Brener I. MRS Internet. J. Nitride Semicond. Res. 1:1996;16.
10. Hellman E.S. MRS Internet. J. Nitride Semicond. Res. 3:1998;11.
11. Gaska R., Wang J.W., Bykhovski A.D., Shur M.S., Kaminski V.V., Soloviov S.M. Appl. Phys. Lett. 72:1998;64.
12. Ramachandran V., Feenstra R.M., Sarney W.L., Salamanca-Riba L., Northrup J.E., Romano L.T., Greve D.W. Appl. Phys. Lett. 75:1998;808.
13. Ohtake A., Miwa S., Kuo L.H., Yasuda T., Kimura K., Jin C., Yao T. J. Cryst. Growth. 184/185:1998;163.
14. Franciosi A., van de Walle C.G. Surf. Sci. Rep. 25:1996;1.
15. Johnson M.A.L., Fujita S., Rowland W.H. Jr., Hughes W.C., Cook J.W. Jr., Schetzina J.F. J. Electron. Mater. 25:1996;855.
16. Vispute R.D., Talyansky V., Choopun S., Sharma R.P., Venkatesan T., He M., Ting X., Halpern J.B., Specer M.G., Ji Y.X., Slamaca-Riba L.G., Iliadis A.A., Jones K.A. Appl. Phys. Lett. 73:1998;348.
17. Hong S.K., Ko H.J., Chen Y., Yao T. J. Cryst. Growth. 209:2000;537.
18. Wolter S.D., Luther B.P., Waltemyer D.L., Onneby C., Mohney S.E., Molnar R.J. Appl. Phys. Lett. 70:1997;2156.
19. Wolter S.D., Mohney S.E., Venugopalan H., Wickenden A.E., Koleske D.D. J. Electrochem. Soc. 145:1998;629.
20. Prabhakaran K., Andersson T.G., Nozawa K. Appl. Phys. Lett. 69:1996;3212.
21. Roy R., Hill V.G., Osborn E.F. J. Am. Ceram. Soc. 75:1952;719.
22. Barin I. Thermochemical Data of Pure Substances. 1989;600 VCH, Weinheim, Germany.
23. Bruley J., Stemmer S., Ernst F., Ruhle M., Hsu W.-Y., Raj R. Appl. Phys. Lett. 65:1994;564.
24. Hong S.K., Ko H.J., Chen Y., Manada T., Yao T. J. Vac. Sci. Technol. B18:2000;. in press.