Formation mechanism of {0001} ZnO epitaxial layer on γ-LiAl O 2 (100) substrate by chemical vapor deposition

Journal of the Electrochemical Society

Volumn 158, Issue 1, 2011, Pages

  Huang, Teng Hsing ^a   Chang, Liuwen ^a   Chou, Mitch M C ^a   Jahn, Uwe ^b  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EMITTING CHARACTERISTICS; FORMATION MECHANISM; HIGH GROWTH RATE; LOW DENSITY; LOW SURFACE ENERGY; LOW TEMPERATURES; ORIENTED CRYSTALS; SUBSTRATE SURFACE; ZNO; ZNO EPITAXIAL FILMS;

CHEMICAL VAPOR DEPOSITION; CRYSTALS; DISLOCATIONS (CRYSTALS); EPITAXIAL FILMS; EPITAXIAL GROWTH; SURFACE CHEMISTRY; X RAY DIFFRACTION;

ZINC OXIDE;

EID: 79951972081     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3515319     Document Type: Article

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