Investigation of ZnO epilayers grown under various Zn/O ratios by plasma-assisted molecular-beam epitaxy

Journal of Applied Physics

Volumn 92, Issue 8, 2002, Pages 4354-4360

  Ko, Hang Ju ^a   Yao, Takafumi ^a   Chen, Yefan ^b   Hong, Soon Ku ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b LUCENT TECHNOLOGIES   (United States)

^c Brown University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STEP; EPILAYERS GROWN; FLUX CONDITIONS; FLUX RATIO; GROWTH CONDITIONS; NONRADIATIVE CENTERS; OXYGEN-RICH CONDITIONS; PHOTOLUMINESCENCE SPECTRUM; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SURFACE PHASE; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES; X RAY ROCKING CURVE; ZNO; ZNO LAYERS;

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MOLECULAR BEAMS; OPTICAL PROPERTIES; OXYGEN; PHASE DIAGRAMS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; ZINC;

ZINC OXIDE;

EID: 3042830063     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509103     Document Type: Article

References (33)

1. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230 (1997). apl APPLAB 0003-6951
2. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 73, 1038 (1998). apl APPLAB 0003-6951
3. H. J. Ko, Y. F. Chen, T. Yao, K. Miyajma, A. Yamamoto, and T. Goto, Appl. Phys. Lett. 77, 537 (2000). apl APPLAB 0003-6951
4. Zu, Z. K. Tang, G. K. L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, Solid State Commun. 103, 459 (1997). ssc SSCOA4 0038-1098
5. S. Bethke, H. Pan, and B. W. Wessels, Appl. Phys. Lett. 52, 138 (1998). apl APPLAB 0003-6951
6. R. D. Vispute, V. Talyansky, Z. Trajanovic, S. Choopun, M. Downes, R. P. Sharma, M. C. Woods, R. T. Lareau, K. A. Jones, and A. A. Iliadis, Appl. Phys. Lett. 70, 2735 (1997). apl APPLAB 0003-6951
7. Y. F. Chen, D. M. Bagnall, H. J. Ko, K. T. Park, K. Hiraga, Z. Zhu, and T. Yao, J. Appl. Phys. 84, 3912 (1998). jap JAPIAU 0021-8979
8. H. J. Ko, Y. F. Chen, S. K. Hong, and T. Yao, J. Cryst. Growth 209, 816 (2000). jcr JCRGAE 0022-0248
9. Y. F. Chen, H. J. Ko, S. K. Hong, and T. Yao, Appl. Phys. Lett. 76, 559 (2000). apl APPLAB 0003-6951
10. S. K. Hong, T. Hanada, H. J. Ko, Y. F. Chen, T. Yao, D. Imai, K. Araki, and M. Shimohara, Appl. Phys. Lett. 77, 3571 (2000). apl APPLAB 0003-6951
11. S. Tomiya, H. Okuyama, and A. Ishibashi, Appl. Surf. Sci. 159-160, 243 (2000). asu ASUSEE 0169-4332
12. E. J. Tarsa, B. Heying, X. H. Wu, P. Fini, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 82, 5472 (1997). jap JAPIAU 0021-8979
13. B. Heying, R. Averbeck, L. F. Chen, E. Haus, H. Riechert, and J. S. Speck, J. Appl. Phys. 88, 1855 (2000). jap JAPIAU 0021-8979
14. M. A. Herman and S. Sitter, in Molecular Beam Epitaxy, edited by M. B. Penish (Springer-Verlag Berlin, 1989), pp. 19-23.
15. B. F. Lewis, R. Fernandez, A. Madhukar, and F. J. Grunthaner, J. Vac. Sci. Technol. B 4, 560 (1986). jvb JVTBD9 0734-211X
16. A. R. Smith, R. M. Feenstra, D. W. Greve, J. Neugebauer, and J. E. Northrup, Phys. Rev. Lett. 79, 3934 (1997). prl PRLTAO 0031-9007
17. Z. Yu, S. L. Buczkowski, N. C. Giles, T. H. Myers, and M. R. Richards-Babb et al. Appl. Phys. (N.Y.) 69, 2731 (1996). apy APPYEK 1080-9198
18. Y. Chen, H. J. Ko, S. K. Hong, Y. Segawa, and T. Yao, Appl. Phys. Lett. 80, 1358 (2002). apl APPLAB 0003-6951
19. H. Heinke, V. Kirchner, S. Einfeldt, and D. Hommel, Phys. Status Solidi A 176, 391 (1999). psa PSSABA 0031-8965
20. V. Srikant, J. S. Speck, and D. R. Clarke, J. Appl. Phys. 82, 4286 (1997). jap JAPIAU 0021-8979
21. H. Heinke, V. Kirchner, S. Einfeldt, and D. Hommel, Appl. Phys. Lett. 77, 2145 (2000). apl APPLAB 0003-6951
22. S. K. Hong, H. J. Ko, Y. F. Chen, and T. Yao, J. Cryst. Growth 209, 537 (2000). jcr JCRGAE 0022-0248
23. W. Qian, M. Skowronski, M. DeGraef, K. Doverspike, L. B. Rowland, and D. K. Gaskill, Appl. Phys. Lett. 66, 1252 (1995). apl APPLAB 0003-6951
24. Optical Characterization of Epitaxial Semiconductor Layers, edited by R. Wolfgang and B. Gunther, (Berlin, New York, 1995).
25. U. Beck, T. H. Metzger, J. Peisl, and J. R. Patel, Appl. Phys. Lett. 76, 2698 (2000). apl APPLAB 0003-6951
26. X-ray Diffraction, edited by B. E. Warren (Addison-Wesley, Massachusetts, 1969).
27. J. Filinski and T. Skettrup, Proc. IX Conf. Sem. Moscow, 1, 216 (1968).
28. P. M. Petroff and R. L. Hartman, Appl. Phys. Lett. 23, 469 (1973). apl APPLAB 0003-6951
29. S. Tomiya, E. Morita, M. Ukita, H. Okuyama, S. Itoh, K. Nakano, and A. Ishibashi, Appl. Phys. Lett. 66, 1208 (1995). apl APPLAB 0003-6951
30. D. C. Reynolds, D. C. Look, B. Jogai, and H. Morkoç, Solid State Commun. 101, 643 (1997). ssc SSCOA4 0038-1098
31. R. Dingle, Phys. Rev. Lett. 23, 579 (1969). prl PRLTAO 0031-9007
32. F. A. Kroger and H. J. Vink, J. Chem. Phys. 22, 250 (1954). jcp JCPSA6 0021-9606
33. K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. 79, 7983 (1996). jap JAPIAU 0021-8979