A collective relaxation model for resistance drift in phase change memory cells

IEEE International Reliability Physics Symposium Proceedings

Volumn 2015-May, Issue , 2015, Pages MY51-MY56

  Sebastian, Abu ^a   Krebs, Daniel ^a   Le Gallo, Manuel ^a   Pozidis, Haralampos ^a   Eleftheriou, Evangelos ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

STRUCTURAL RELAXATION; TEMPERATURE DISTRIBUTION;

ATOMIC CONFIGURATION; ELECTRICAL TRANSPORT MODEL; ORDERS OF MAGNITUDE; PHASE CHANGE MEMORY (PCM); RELAXATION MODELS; RESISTANCE VARIATIONS; TEMPORAL EVOLUTION; TIME-TEMPERATURE DEPENDENCE;

PHASE CHANGE MEMORY;

EID: 84940368954     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2015.7112808     Document Type: Conference Paper

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