Phase change memory reliability: A signal processing and coding perspective

IEEE Transactions on Magnetics

Volumn 51, Issue 4, 2015, Pages

  Pozidis, Haralampos ^a   Mittelholzer, Thomas ^a   Papandreou, Nikolaos ^a   Parnell, Thomas ^a   Stanisavljevic, Milos ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

Channel coding; nonvolatile memory; parameter estimation; phase change memory; signal detection

Indexed keywords

CHANNEL CODING; CODES (SYMBOLS); DIGITAL STORAGE; PARAMETER ESTIMATION; RELIABILITY; SIGNAL DETECTION; SIGNAL PROCESSING;

INCREASING CAPACITIES; MEMORY TECHNOLOGY; MULTI LEVEL CELL (MLC); NON-VOLATILE MEMORY; PHASE CHANGE MEMORY (PCM); RESISTANCE DRIFTS; SOLID STATE MEMORY; STATISTICAL MODELING;

PHASE CHANGE MEMORY;

EID: 84930507679     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2014.2357176     Document Type: Article

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