Thermal disturbance and its impact on reliability of phase-change memory studied by the Micro-Thermal stage

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 99-103

  Kim, Sang Bum ^a   Lee, Byoungil ^a   Asheghi, Mehdi ^a   Hurkx, G A M ^b   Reifenberg, John ^a   Goodson, Kenneth ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

^b NXP TSMC Research Center   (Belgium)

Author keywords

Phase change memory; Program disturb; Proximity disturbance; Reliability; Thermal crosstalk; Thermal disturbance

Indexed keywords

DATA RETENTION; HIGH RESISTANCE; MEASUREMENT STRUCTURES; MULTI-BITS; PROGRAM-DISTURB; PROXIMITY DISTURBANCE; STATE RESISTANCE; TEMPERATURE DEPENDENCE; THERMAL CROSSTALK; THERMAL DISTURBANCE; THERMAL STAGE; THERMAL TIME CONSTANTS; THRESHOLD SWITCHING; TIME-SCALES;

CROSSTALK; ELECTRIC FIELDS; RELIABILITY;

PHASE CHANGE MEMORY;

EID: 77957895258     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488847     Document Type: Conference Paper

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