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Volumn 2015-May, Issue , 2015, Pages 5B61-5B66

Phase-change memory: Feasibility of reliable multilevel-cell storage and retention at elevated temperatures

Author keywords

drift; endurance; multilevel cell (MLC) storage; non volatile memories (NVM); Phase change memory (PCM); readout metric

Indexed keywords

DURABILITY; RELIABILITY;

EID: 84942853564     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2015.7112747     Document Type: Conference Paper
Times cited : (35)

References (14)
  • 1
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    • A 20nm 1. 8V 8Gb PRAM with 40MB/s program bandwidth
    • Y. Choi, et al., "A 20nm 1. 8V 8Gb PRAM with 40MB/s program bandwidth, " in Proc. Intl. ISSCC Tech. Dig., 2012, pp. 46-48.
    • (2012) Proc. Intl. ISSCC Tech. Dig , pp. 46-48
    • Choi, Y.1
  • 3
    • 67349254101 scopus 로고    scopus 로고
    • Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells Part I: Experimental study
    • D. Ielmini, D. Sharma, S. Lavizzari, and A. L. Lacaita, "Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells Part I: Experimental study, " IEEE Trans. Electron Devices, vol. 56, no. 5, pp. 1070-1077, 2009.
    • (2009) IEEE Trans. Electron Devices , vol.56 , Issue.5 , pp. 1070-1077
    • Ielmini, D.1    Sharma, D.2    Lavizzari, S.3    Lacaita, A.L.4
  • 4
    • 33745633904 scopus 로고    scopus 로고
    • Experimental investigation of transport properties in chalcogenide materials through 1/f noise measurements
    • D. Fugazza, D. Ielmini, S. Lavizzari, and A. L. Lacaita, "Experimental investigation of transport properties in chalcogenide materials through 1/f noise measurements, " Appl. Phys. Lett., vol. 88, pp. 263506, 2006.
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 263506
    • Fugazza, D.1    Ielmini, D.2    Lavizzari, S.3    Lacaita, A.L.4
  • 5
    • 67349157165 scopus 로고    scopus 로고
    • Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells-Part II: Physics-based modeling
    • May
    • S. Lavizzari, D. Ielmini, D. Sharma, and A. L. Lacaita, "Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells-Part II: Physics-based modeling, " IEEE Trans. Electron Devices, vol. 56, no. 5, pp. 1078-1085, May 2009.
    • (2009) IEEE Trans. Electron Devices , vol.56 , Issue.5 , pp. 1078-1085
    • Lavizzari, S.1    Ielmini, D.2    Sharma, D.3    Lacaita, A.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.