메뉴 건너뛰기




Volumn , Issue , 2013, Pages

A versatile platform for characterization of solid-state memory channels

Author keywords

[No Author keywords available]

Indexed keywords

EMERGING NON-VOLATILE MEMORY; HARDWARE PLATFORM; HARDWARE TESTBEDS; INTERFERENCE SOURCES; NON-VOLATILE MEMORY; PERFORMANCE CHARACTERIZATION; SOLID-STATE MEMORY; STATISTICAL CHARACTERIZATION;

EID: 84888882514     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICDSP.2013.6622745     Document Type: Conference Paper
Times cited : (8)

References (18)
  • 1
    • 77949611974 scopus 로고    scopus 로고
    • Phase-change technology and the future of main memory
    • Jan.-Feb.
    • B. C. Lee, P. Zhou, J. Yang, Y. Zhang, B. Zhao, E. Ipek, O. Mutlu, and D. Burger, "Phase-Change Technology and the Future of Main Memory," IEEE Micro, Vol. 30, no. 1, pp. 131-141, Jan.-Feb. 2010.
    • (2010) IEEE Micro , vol.30 , Issue.1 , pp. 131-141
    • Lee, B.C.1    Zhou, P.2    Yang, J.3    Zhang, Y.4    Zhao, B.5    Ipek, E.6    Mutlu, O.7    Burger, D.8
  • 2
    • 77956085491 scopus 로고    scopus 로고
    • Rethinking flash in the data center
    • Jan.-Feb.
    • D. G. Andersen, and S. Swanson, "Rethinking Flash in the Data Center," IEEE Micro, Vol. 30, no. 3, pp. 52-54, Jan.-Feb. 2010.
    • (2010) IEEE Micro , vol.30 , Issue.3 , pp. 52-54
    • Andersen, D.G.1    Swanson, S.2
  • 3
    • 81555199698 scopus 로고    scopus 로고
    • Technologies for the exascale systems
    • Sep.-Oct.
    • P. W. Coteus, J. U. Knickerbocker, C. H. Lam, and Y. A. Vlasov, "Technologies for the exascale systems," IBM J. Res. Dev., Vol. 55, no. 5, pp. 14:1-14:12, Sep.-Oct. 2011.
    • (2011) IBM J. Res. Dev. , vol.55 , Issue.5 , pp. 141-1412
    • Coteus, P.W.1    Knickerbocker, J.U.2    Lam, C.H.3    Vlasov, Y.A.4
  • 4
    • 84872101045 scopus 로고    scopus 로고
    • 2 64 GB multi-level flash memory with 400 mbit/sec/pin 1.8 V toggle mode interface
    • Jan
    • 2 64 GB multi-level Flash memory with 400 Mbit/sec/pin 1.8 V Toggle mode interface," IEEE J. Solid-State Circuits, Vol. 48, no. 1, pp. 159-167, Jan, 2013.
    • (2013) IEEE J. Solid-State Circuits , vol.48 , Issue.1 , pp. 159-167
    • Kanda, K.1
  • 5
    • 55449106208 scopus 로고    scopus 로고
    • Phase-change random access memory: A scalable technology
    • S. Raoux et al., "Phase-change random access memory: A scalable technology," IBM J. Res. Dev., Vol. 52, no. 4/5, pp. 465-479, 2008.
    • (2008) IBM J. Res. Dev. , vol.52 , Issue.4-5 , pp. 465-479
    • Raoux, S.1
  • 6
    • 84864070206 scopus 로고    scopus 로고
    • Emerging memory technology perspective
    • R. Bez and P. Cappelletti, "Emerging memory technology perspective," in Proc. VLSI-DAT, 2012, pp. 1-2.
    • (2012) Proc. VLSI-DAT , pp. 1-2
    • Bez, R.1    Cappelletti, P.2
  • 9
    • 84866632849 scopus 로고    scopus 로고
    • Error control coding and signal processing for flash memories
    • B. Shin, C. Seol, J.-S. Chung, and J. J. Kong, "Error control coding and signal processing for flash memories," in Proc. IEEE ISCAS, 2012, pp. 409-412.
    • (2012) Proc. IEEE ISCAS , pp. 409-412
    • Shin, B.1    Seol, C.2    Chung, J.-S.3    Kong, J.J.4
  • 10
    • 79551510806 scopus 로고    scopus 로고
    • On the use of soft-decision error-correction codes in NAND flash memory
    • Feb.
    • G. Dong, N. Xie, and T. Zhang, "On the Use of Soft-Decision Error-Correction Codes in NAND Flash Memory," IEEE Trans. Circuits and Systems I: Regular Papers, Vol. 58, no. 2, pp. 429-439, Feb. 2011.
    • (2011) IEEE Trans. Circuits and Systems I: Regular Papers , vol.58 , Issue.2 , pp. 429-439
    • Dong, G.1    Xie, N.2    Zhang, T.3
  • 11
    • 84867614372 scopus 로고    scopus 로고
    • Least squares based cell-to-cell interference cancelation technique for multi-level cell NAND flash memory
    • Dong-Hwan Lee and Wonyong Sung, "Least squares based cell-to-cell interference cancelation technique for multi-level cell NAND Flash memory," in Proc. IEEE ICASSP, 2012, pp. 1601-1604.
    • (2012) Proc. IEEE ICASSP , pp. 1601-1604
    • Lee, D.-H.1    Sung, W.2
  • 12
    • 47249119179 scopus 로고    scopus 로고
    • Novel lithography-independent pore phase change memory
    • M. Breitwisch et al., "Novel lithography-independent pore phase change memory," in Symp. VLSI Tech. Dig., 2007, pp. 100-101.
    • (2007) Symp. VLSI Tech. Dig. , pp. 100-101
    • Breitwisch, M.1
  • 13
    • 58149231291 scopus 로고    scopus 로고
    • A bipolar-selected phase change memory featuring multi-level cell storage
    • Jan.
    • F. Bedeschi et al., "A bipolar-selected phase change memory featuring multi-level cell storage," IEEE J. Solid-State Circ., Vol. 44, no. 1, pp. 217-227, Jan. 2009.
    • (2009) IEEE J. Solid-State Circ. , vol.44 , Issue.1 , pp. 217-227
    • Bedeschi, F.1
  • 15
    • 67349254101 scopus 로고    scopus 로고
    • Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells-Part I: Experimental study
    • May
    • D. Ielmini, D. Sharma, S. Lavizzari, and A. L. Lacaita, "Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells-Part I: Experimental study," IEEE Trans. Electron Devices, Vol. 56, no. 5, pp. 1070-1077, May 2009.
    • (2009) IEEE Trans. Electron Devices , vol.56 , Issue.5 , pp. 1070-1077
    • Ielmini, D.1    Sharma, D.2    Lavizzari, S.3    Lacaita, A.L.4
  • 17
    • 77957913753 scopus 로고    scopus 로고
    • Random telegraph signal noise in phase change memory devices
    • D. Fugazza, D. Ielmini, S. Lavizzari, and A. L. Lacaita, "Random telegraph signal noise in phase change memory devices," in Proc. IRPS, 2010, pp. 743-749.
    • (2010) Proc. IRPS , pp. 743-749
    • Fugazza, D.1    Ielmini, D.2    Lavizzari, S.3    Lacaita, A.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.