AxBAxB ... pulsed atomic layer deposition: Numerical growth model and experiments

Journal of Applied Physics

Volumn 119, Issue 8, 2016, Pages

  Muneshwar, Triratna ^a   Cadien, Ken ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS; DEPOSITION; FILM GROWTH; GROWTH KINETICS; HAFNIUM OXIDES; LIGANDS; OPTICAL PUMPING; PHYSISORPTION; REACTION KINETICS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICES; SURFACE REACTIONS;

ADDITIONAL REACTIONS; GROWTH PER CYCLE; MODEL CALCULATIONS; NANOSCALE STRUCTURE; PRECURSOR MOLECULES; PULSED DEPOSITION; STERIC HINDRANCES; SURFACE SATURATION;

ATOMIC LAYER DEPOSITION;

EID: 84959423402     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4942439     Document Type: Article

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33. 3 films; (S2) effect of lowering precursor vapor pressure on ALD growth; and (S3) optimization of interval tR between consecutive precursor pulses in AxBAxB. deposition.