메뉴 건너뛰기




Volumn 150, Issue , 2016, Pages 32-38

Silicon heterojunction solar cells with electron selective TiOx contact

Author keywords

Carrier selective contact; Heterojunctions; Solar cells; Titanium dioxide

Indexed keywords

ATOMIC LAYER DEPOSITION; EFFICIENCY; ELECTRONS; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; PASSIVATION; SEMICONDUCTING SILICON; SILICON; SOLAR CELLS; TITANIUM DIOXIDE; ULTRATHIN FILMS;

EID: 84958745354     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2016.01.020     Document Type: Article
Times cited : (181)

References (40)
  • 1
    • 0033364929 scopus 로고    scopus 로고
    • 24.5% efficiency silicon PERT cells on MCZ substrates and 24.7% efficiency PERL cells on FZ substrates
    • J. Zhao, A. Wang, and Martin A. Green 24.5% efficiency silicon PERT cells on MCZ substrates and 24.7% efficiency PERL cells on FZ substrates Prog Photovolt. 7 1999 471 474
    • (1999) Prog Photovolt. , vol.7 , pp. 471-474
    • Zhao, J.1    Wang, A.2    Green, M.A.3
  • 2
    • 84912137505 scopus 로고    scopus 로고
    • High efficiency n-type PERT and PERL solar cells
    • Denver, USA
    • J. Benick, B. Steinhauser, R. Müller, J. Bartsch, M. Kamp, A. Mondon, A. Richter, M. Hermle, S. Glunz, High efficiency n-type PERT and PERL solar cells, in: Proceeding of the 40th IEEE Photovoltaics Specialist Conference, Denver, USA, 3637 (2014).
    • (2014) Proceeding of the 40th IEEE Photovoltaics Specialist Conference , vol.3637
    • Benick, J.1
  • 14
    • 84860537225 scopus 로고    scopus 로고
    • 3 interfacial layer for organic photovoltaics prepared by a facile synthesis method
    • 3 interfacial layer for organic photovoltaics prepared by a facile synthesis method Adv. Mater. 24 2012 2459
    • (2012) Adv. Mater. , vol.24 , pp. 2459
    • Murase, S.1    Yang, Y.2
  • 16
    • 44249084707 scopus 로고    scopus 로고
    • P-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells
    • M.D. Irwin, D.B. Buchholz, A.W. Hains, R.P.H. Chang, and T.J. Marks p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells PNAS 105 2007 2783
    • (2007) PNAS , vol.105 , pp. 2783
    • Irwin, M.D.1    Buchholz, D.B.2    Hains, A.W.3    Chang, R.P.H.4    Marks, T.J.5
  • 22
    • 84878369077 scopus 로고    scopus 로고
    • Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics
    • S. Avasthi, W. McClain, G. Man, A. Kahn, J. Schwartz, and J. Sturm Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics Appl. Phys. Lett. 102 2013 203901
    • (2013) Appl. Phys. Lett. , vol.102 , pp. 203901
    • Avasthi, S.1    McClain, W.2    Man, G.3    Kahn, A.4    Schwartz, J.5    Sturm, J.6
  • 26
    • 84886451220 scopus 로고    scopus 로고
    • 2 stack layers for effective surface passivation of crystalline silicon
    • 2 stack layers for effective surface passivation of crystalline silicon J. Appl. Phys. 114 2013 154107
    • (2013) J. Appl. Phys. , vol.114 , pp. 154107
    • Suh, D.1    Choi, D.2    Weber, K.3
  • 29
    • 0001501824 scopus 로고
    • Ohmic contacts for GaAs devices
    • R. Cox, and H. Strack Ohmic contacts for GaAs devices Solid-State Electron. 10 1967 1213 1218
    • (1967) Solid-State Electron. , vol.10 , pp. 1213-1218
    • Cox, R.1    Strack, H.2
  • 30
    • 84857350589 scopus 로고    scopus 로고
    • Aluminumm oxide and other ALD materials for Si surface passivation
    • G. Dingemans, and W.M.M. Kessels Aluminumm oxide and other ALD materials for Si surface passivation ECS Trans. 41 2011 293 301
    • (2011) ECS Trans. , vol.41 , pp. 293-301
    • Dingemans, G.1    Kessels, W.M.M.2
  • 33
    • 84979243230 scopus 로고    scopus 로고
    • Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide
    • B. Liao, B. Hoex, A.G. Aberle, D. Chi, and C.S. Bhatia Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide Appl. Phys. Lett. 104 2014 253903
    • (2014) Appl. Phys. Lett. , vol.104 , pp. 253903
    • Liao, B.1    Hoex, B.2    Aberle, A.G.3    Chi, D.4    Bhatia, C.S.5
  • 34
    • 84924940036 scopus 로고    scopus 로고
    • High efficiency n-type silicon solar cells featuring passivated contact to laser doped regions
    • X. Yang, J. Bullock, Q. Bi, and K. Weber High efficiency n-type silicon solar cells featuring passivated contact to laser doped regions Appl. Phys. Lett. 106 2015 113901
    • (2015) Appl. Phys. Lett. , vol.106 , pp. 113901
    • Yang, X.1    Bullock, J.2    Bi, Q.3    Weber, K.4
  • 40
    • 0022306789 scopus 로고
    • Measurement of the emitter saturation current by a contactless photoconductivity decay method
    • Las Vegas, USA
    • D.E. Kane and R.M. Swanson, Measurement of the emitter saturation current by a contactless photoconductivity decay method, in: Proceedings of the 18th IEEE Photovoltaic Specialist Conference, Las Vegas, USA, (1985), pp. 578-583
    • (1985) Proceedings of the 18th IEEE Photovoltaic Specialist Conference , pp. 578-583
    • Kane, D.E.1    Swanson, R.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.