Passivation of aluminium-n+ silicon contacts for solar cells by ultrathin Al2O3 and SiO2 dielectric layers

Physica Status Solidi - Rapid Research Letters

Volumn 7, Issue 11, 2013, Pages 946-949

  Bullock, James ^a   Yan, Di ^a   Cuevas, Andrés ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Contact resistance; Metal insulator semiconductor structures; Silicon; Solar cells; Surface passivation

Indexed keywords

ATOMIC LAYER DEPOSITED; CONTACT RECOMBINATIONS; CONTACT RESISTIVITIES; HIGH EFFICIENCY SILICON SOLAR CELLS; INSULATOR THICKNESS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; METAL-INSULATOR-SEMICONDUCTORS; SURFACE PASSIVATION;

ALUMINUM; ATOMIC LAYER DEPOSITION; CONTACT RESISTANCE; DIELECTRIC MATERIALS; DIFFUSION; MIS DEVICES; OPEN CIRCUIT VOLTAGE; PASSIVATION; SILICON; SILICON SOLAR CELLS; SOLAR CELLS;

SILICON OXIDES;

EID: 84888015852     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201308115     Document Type: Article

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