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Volumn , Issue , 2014, Pages 3637-3640

High efficiency n-type PERT and PERL solar cells

Author keywords

high efficiency; implantation; laser; n type

Indexed keywords

ION IMPLANTATION; LASERS; PASSIVATION; SILICON; SILICON SOLAR CELLS;

EID: 84912137505     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2014.6924895     Document Type: Conference Paper
Times cited : (29)

References (10)
  • 1
    • 84891555459 scopus 로고    scopus 로고
    • Fully ion implanted n-type cells - A contender for industrial cells with >20.5% efficiency
    • T. S. Böschke et al., "Fully ion implanted n-type cells - a contender for industrial cells with >20.5% efficiency", IEEE Journal of Photovoltaics 4(1), p. 48-51, 2013.
    • (2013) IEEE Journal of Photovoltaics , vol.4 , Issue.1 , pp. 48-51
    • Böschke, T.S.1
  • 2
    • 84860504651 scopus 로고    scopus 로고
    • High throughput ion-implantation for low cost high-efficiency silicon solar cells
    • A. Rohatgi et al., "High throughput ion-implantation for low cost high-efficiency silicon solar cells", Energy Procedia 15, p. 10-19, 2013.
    • (2013) Energy Procedia , vol.15 , pp. 10-19
    • Rohatgi, A.1
  • 7
    • 84912071886 scopus 로고    scopus 로고
    • Overview on n-type solar cell architectures, efficiencies and importance for measurement standards
    • Chambery, France
    • R. Kopecek, "Overview on n-type solar cell architectures, efficiencies and importance for measurement standards", Proceedings of the 3rd n-PV Workshop, Chambery, France, 2013.
    • (2013) Proceedings of the 3rd N-PV Workshop
    • Kopecek, R.1
  • 8
    • 84927567831 scopus 로고    scopus 로고
    • Metallization-induced recombination losses of bifacial silicon solar cells
    • A. Edler et al., "Metallization-induced recombination losses of bifacial silicon solar cells", Prog. Photovolt: Res. Appl., 201), DOI: 10.1002/pip.2479
    • Prog. Photovolt: Res. Appl. , vol.201
    • Edler, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.