Excellent c-Si surface passivation by low- Temperature atomic layer deposited titanium oxide

Applied Physics Letters

Volumn 104, Issue 25, 2014, Pages

  Liao, Baochen ^a,b   Hoex, Bram ^a   Aberle, Armin G ^a   Chi, Dongzhi ^b   Bhatia, Charanjit S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; OXIDE FILMS; PASSIVATION; REFRACTIVE INDEX; SILICON; SILICON NITRIDE; SILICON OXIDES; SILICON WAFERS; SOLAR CELLS; TEMPERATURE; TITANIUM; TITANIUM OXIDES;

ATOMIC LAYER DEPOSITED; CRYSTALLINE SILICONS; EXTINCTION COEFFICIENTS; LOW TEMPERATURES; POST-DEPOSITION ANNEAL; SILICON WAFER SOLAR CELLS; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

ATOMIC LAYER DEPOSITION;

EID: 84979243230     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4885096     Document Type: Article

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