Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell

Applied Physics Letters

Volumn 106, Issue 12, 2015, Pages

  Nagamatsu, Ken A ^a   Avasthi, Sushobhan ^a,c   Sahasrabudhe, Girija ^a,b   Man, Gabriel ^a   Jhaveri, Janam ^a   Berg, Alexander H ^a   Schwartz, Jeffrey ^a,b   Kahn, Antoine ^a   Wagner, Sigurd ^a   Sturm, James C ^a  

^a Princeton University   (United States)

^b PRINCETON UNIVERSITY   (United States)

^c INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; OXIDES; SILICON; SOLAR CELLS; TITANIUM; TITANIUM DIOXIDE;

CRYSTALLINE SILICONS; DOUBLE HETEROJUNCTIONS; FABRICATION TECHNIQUE; HIGH EFFICIENCY SILICON SOLAR CELLS; HOLE BLOCKING LAYERS; NEAR ROOM TEMPERATURE; PHOTOVOLTAIC DEVICES; POLY(3 ,4-ETHYLENEDIOXYTHIOPHENE):POLY(STYRENESULFONATE);

SILICON SOLAR CELLS;

EID: 84961288710     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4916540     Document Type: Article

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