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Volumn 28, Issue 8, 2013, Pages
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Silicon passivation and tunneling contact formation by atomic layer deposited Al2O3/ZnO stacks
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC LAYER DEPOSITED;
CONTACT FORMATION;
P-TYPE SI;
PHOTOVOLTAICS;
SINGLE LAYER;
SURFACE PASSIVATION;
SURFACE RECOMBINATION VELOCITIES;
TUNNELING CURRENT;
ATOMIC LAYER DEPOSITION;
HETEROJUNCTIONS;
PASSIVATION;
SEMICONDUCTOR DOPING;
SILICON;
ZINC OXIDE;
ALUMINUM;
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EID: 84880293546
PISSN: 02681242
EISSN: 13616641
Source Type: Journal
DOI: 10.1088/0268-1242/28/8/082002 Document Type: Article |
Times cited : (35)
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References (22)
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