Surface passivation of c-Si by Atomic Layer Deposition TiO2 thin films deposited at low temperature

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Volumn , Issue , 2014, Pages 1271-1274

  Yu, Ing Song ^a   Chang, I Hsuan ^b   Cheng, Hsyi En ^b   Lin, Yung Sheng ^c  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c E Ton Solar Tech Co LTD   (Taiwan)

Author keywords

anatase; Atomic Layer Deposition; silicon solar cell; surface passivation; surface recombination velocity; titanium dioxide

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; DEPOSITION; ELECTRON MICROSCOPY; FILM THICKNESS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LOW TEMPERATURE ENGINEERING; OXIDES; PASSIVATION; PHASE TRANSITIONS; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON SOLAR CELLS; SILICON WAFERS; SURFACE DEFECTS; SURFACE ROUGHNESS; TEMPERATURE; THIN FILMS; TITANIUM; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINE SILICON SOLAR CELLS; DEFECTS FORMATION; GRAZING INCIDENCE; LOW TEMPERATURES; SILICON SURFACES; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; SURFACE-ROUGHENING;

ATOMIC LAYER DEPOSITION;

EID: 84912067581     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2014.6925148     Document Type: Conference Paper

References (13)

1. A. G. Aberle, "Surface Passivation of Crystalline Silicon Solar Cells: A Review", Progress in Photovoltaics: Research and Applications, Vol. 8, pp. 473-487, 2000.
2. M. A. Green, "The Path to 25% Silicon Solar Cell Efficiency: History of Silicon Cell Evolution", Progress in Photovoltaics: Research and Applications, Vol. 17, pp. 183-189, 2009.
3. M. Taguchi, A. Yano, S. Tohoda, K. Matsuyama, Y. Nakamura, T. Nishiwaka, K. Fujita, Y. Maruyama, "24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer", IEEE Journal of Photovoltaics, Vol. 4, pp. 96-99, 2014.
4. W. Liang, K. J. Weber, D. Suh, S. P. Phang, J. Yu, A. K. McAuley, and B. R. Legg "Surface Passivation of Boron-Diffused p-Type Silicon Surface with (100) and (III) Orientations by ALD AI203 Layers" IEEE Journal of Photovoltaics, Vol. 3, pp. 678-683, 2013
5. B. S. Rechards, "Comparison of TiO2 and other dielectric coatings for buried contact solar cells: a review", Progress in Photovoltaics: Research and Applications, Vol. 12, pp. 253-281, 2004.
6. A. Rohatgi, P. Doshi, J. Moschner, T. Lauinger, A. G. Aberle, and D. S. Ruby "Compressive Study of Rapid Low-Cost Silicon Surface Passivation Technologies", IEEE Transations on Electron Devices, Vol. 47, no. 5, pp. 987-993, 2000.
7. L. M. Doeswijk, H. H. C. de Moor, D. H. A. Blank, and H. Rogalla, "Passivating TiO2 coatings for silicon solar cells by plused laser deposition", Applied Physics A, Vol. 69, pp. S409-S411, 1999
8. th EUPVSEC, pp. 1146-1153, 2010.
9. I.-S. Yu, Y.-W. Wang, H.-E. Cheng, Z.-P. Yang, C.-T. Lin, "Surface passivation and antireflection behavior of ALD TiO2 on n-type silicon for solar cells", international Journals of photoenergy, Vol. 2013, 431614, 2013.
10. R. A. Sinton, A. Cuevas, M. Stuckings, "Quasi-Steady-State Photoconductance, "A new method for solar cell material and device characterization," Proceedings of the 25th IEEE Photovoltaic Specialists Conference, pp. 457-460, 1996.
11. D. E. Kane and R. M. Swanson, "Measurement of the emitter saturation current by a contactless photoconductivity decay method," Proceedings of the 18th IEEE Photovoltaic Specialists Conference,p. 578, 1985
12. G.C.A.M. Janssen, M.M. Abdalla, F. van Keulen, B.R. Pujada, B. van Venrooy, "Celebrating the 100th anniversary of the Stoney equation for film stress: Developments from polycrystalline steel strips to single crystal silicon wafers", Thin Solid Films, Vol. 517, p. 1859, 2009
13. H.-E. Cheng, C.-C Chen, "Morphological and photo-electrochemical properties of ALD TiO2 films", Journal of Electrochemical Society, Vol. 155, pp. D604-D607, 2008.