Passivation of a metal contact with a tunneling layer

Energy Procedia

Volumn 21, Issue , 2012, Pages 75-83

  Loozen, X ^a   Larsen, J B ^a,b   Dross, F ^a   Aleman, M ^a   Bearda, T ^a   O'Sullivan, B J ^a   Gordon, I ^a   Poortmans, J ^a  

^a IMEC   (Belgium)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

Aluminum oxide; Contact passivation; MIS contact; PERC; Silicon solar cells; Tunneling layer

Indexed keywords

EID: 84897085135     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2012.05.010     Document Type: Conference Paper

References (13)

1. Green MA, Blakers AW, Shi J, Keller EM, Wenham SR. High-efficiency silicon solar cells. IEEE Trans. Electron Devices 1984;ED-31:679-683.
2. Metz A, Hezel R. Record efficiencies above 21% for MIS-contacted diffused junction silicon solar cells. Proceedings of the 26th IEEE Photovoltaic Specialist Conference 1997:283-6.
3. Hezel R, Metz A. Crystalline silicon solar cells with efficiencies above 20% suitable for mass production. Proceedings of the 16th European Photovoltaic Solar Energy Conference 2000:1091-4.
4. Schmidt J, Merkle A, Brendel R, Hoex B, van de Sanden MCM, Kessels WMM. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3. Prog. Photovolt. 2008;16:461-6.
5. Zielke D, Petermann JH, Werner F, Veith B, Brendel R, Schmidt J. Contact passivation in silicon solar cells using atomiclayer- deposited aluminum oxide layers. Phys. Status Solidi RRL 2011;5:298-300.
6. Petermann JH, Zielke D, Schmidt J, Haase F, Rojas EG, Brendel R. 19%thick crystalline Si solar cell from layer transfer using porous silicon. Prog. Photovolt.: Res. Appl. 2011;20:1-5.
7. Cousins PJ, Smith DD, Luan H-C, Manning J, Dennis TD, Waldhauer A, Wilson KE, Harley G, Mulligan WP. Generation 3: improved performance at lower cost. Proceedings of the 33rd IEEE Photovoltaic Specialist Conference 2010;275-8.
8. Agostinelli G, Delabie A, Vitanov P, Alexieva Z, Dekkers HFW, De Wolf S, Beaucarne G. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge. Sol. Energy Mater. Sol. Cells 2006;90:3438-43.
9. Hoex B, Schmidt J, Pohl P, van de Sanden MCM, Kessels WMM. Silicon surface passivation by atomic layer deposited Al2O3. J. Appl. Phys. 2008;104:044903.
10. Dingemans G, Seguin R, Engelhart P, van de Sanden MCM, Kessels WMM. Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition. Phys. Status Solidi RRL 2010;4:10-2.
11. Hoex B, Schmidt J, Bock R, Altermatt PP, van de Sanden MCM, Kessels WMM. Excellent passivation of highly doped ptype Si surfaces by the negative-charge-dielectric Al2O3. Appl. Phys. Lett. 2007:91:112107.
12. Rothschild A, Vermang B, Goverde H. Atomic layer deposition of Al2O3 for industrial local Al back-surface field (BSF) solar cells. Photovolt. International 2011;13:92-101.
13. Saint-Cast P, Kania D, Hofmann M, Benick J, Rentsch J, Preu R. Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide. Appl. Phys. Lett. 2009;95:151502.