Evolution of Crystal Structure during the Initial Stages of ZnO Atomic Layer Deposition

Chemistry of Materials

Volumn 28, Issue 2, 2016, Pages 592-600

  Boichot, R ^a,b   Tian, L ^a,c   Richard, M I ^d,e   Crisci, A ^a,b   Chaker, A ^a,c   Cantelli, V ^a,c,h   Coindeau, S ^a,b   Lay, S ^a,b   Ouled, T ^d   Guichet, C ^c   Chu, M H ^f   Aubert, N ^f   Ciatto, G ^f   Blanquet, E ^a,b   Thomas, O ^d   Deschanvres, J L ^a,c   Fong, D D ^g   Renevier, H ^a,c  

^a UNIV GRENOBLE ALPES   (France)

^b UNIV GRENOBLE ALPES   (France)

^c LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^d AIX MARSEILLE UNIVERSITÉ   (France)

^e EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^f SYNCHROTRON SOLEIL   (France)

^g ARGONNE NATIONAL LABORATORY   (United States)

^h INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; FILM GROWTH; OXIDE FILMS; ZINC OXIDE;

CHEMICAL EVOLUTION; CRYSTALLINE TEXTURE; IN-SITU SYNCHROTRONS; INTERFACIAL BONDS; LATTICE-MISMATCHED SUBSTRATES; LOW DEPOSITION TEMPERATURE; NATIVE OXIDES;

CRYSTAL STRUCTURE;

EID: 84955581434     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/acs.chemmater.5b04223     Document Type: Article

References (53)

1. Ritala, M.; Kukli, K.; Rahtu, A.; Räisänen, P. I.; Leskelä, M.; Sajavaara, T.; Keinonen, J. Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources Science 2000, 288, 319-321 10.1126/science.288.5464.319
2. 3 Nanocuboids ACS Catal. 2011, 1, 629-635 10.1021/cs200092c
3. Elam, J. W.; Dasgupta, N. P.; Prinz, F. B. ALD for clean energy conversion, utilization, and storage MRS Bull. 2011, 36, 899-906 10.1557/mrs.2011.265
4. Puurunen, R. L.; Vandervorst, W. Island growth as a growth mode in atomic layer deposition: A phenomenological model J. Appl. Phys. 2004, 96, 7686 10.1063/1.1810193
5. 15 and crystallites alignment of (1120) textured ZnO films J. Appl. Phys. 2007, 102, 024110 10.1063/1.2752133
6. Chu, S.-Y.; Chen, T.-Y.; Water, W. Deposition of preferred-orientation ZnO films on the ceramic substrates and its application for surface acoustic wave filters J. Vac. Sci. Technol., A 2004, 22, 1087 10.1116/1.1738653
7. Ghosh, R.; Basak, D.; Fujihara, S. Effect of substrate-induced strain on the structural, electrical, and optical properties of polycrystalline ZnO thin films J. Appl. Phys. 2004, 96, 2689 10.1063/1.1769598
8. Nilsen, O.; Karlsen, O. B.; Kjekshus, A.; Fjellvåg, H. Simulation of growth dynamics for nearly epitaxial films J. Cryst. Growth 2007, 308, 366-375 10.1016/j.jcrysgro.2007.08.001
9. Karavaev, K.; Kolanek, K.; Tallarida, M.; Schmeisser, D.; Zschech, E. In-Situ Studies of ALD Growth of Hafnium Oxide Films Adv. Eng. Mater. 2009, 11, 265-268 10.1002/adem.200800348
10. Kim, S. K.; Han, J. H.; Kim, G. H.; Hwang, C. S. Investigation on the Growth Initiation of Ru Thin Films by Atomic Layer Deposition Chem. Mater. 2010, 22, 2850-2856 10.1021/cm100057y
11. Fong, D. D.; Eastman, J. A.; Kim, S. K.; Fister, T. T.; Highland, M. J.; Baldo, P. M.; Fuoss, P. H. In situ synchrotron X-ray characterization of ZnO atomic layer deposition Appl. Phys. Lett. 2010, 97, 191904 10.1063/1.3514254
12. Park, Y. J.; Lee, D. R.; Lee, H. H.; Lee, H.-B.-R.; Kim, H.; Park, G.-C.; Rhee, S.-W.; Baik, S. In-Situ Synchrotron X-Ray Scattering Study of Thin Film Growth by Atomic Layer Deposition J. Nanosci. Nanotechnol. 2011, 11, 1577-1580 10.1166/jnn.2011.3399
13. 2 on Planar Substrates and in Nanoporous Films J. Phys. Chem. C 2011, 115, 6605-6610 10.1021/jp111314b
14. Mack, J. F.; Van Stockum, P. B.; Yemane, Y. T.; Logar, M.; Iwadate, H.; Prinz, F. B. Observing the Nucleation Phase of Atomic Layer Deposition In Situ Chem. Mater. 2012, 24, 4357-4362 10.1021/cm302398v
15. Geyer, S. M.; Methaapanon, R.; Johnson, R. W.; Kim, W.-H.; Van Campen, D. G.; Metha, A.; Bent, S. F. An atomic layer deposition chamber for in situ X-ray diffraction and scattering analysis Rev. Sci. Instrum. 2014, 85, 055116 10.1063/1.4876484
16. Geyer, S. M.; Methaapanon, R.; Johnson, R.; Brennan, S.; Toney, M. F.; Clemens, B.; Bent, S. Structural evolution of platinum thin films grown by atomic layer deposition J. Appl. Phys. 2014, 116, 064905 10.1063/1.4892104
17. Law, M.; Greene, L. E.; Johnson, J. C.; Saykally, R.; Yang, P. Nanowire dye-sensitized solar cells Nat. Mater. 2005, 4, 455-459 10.1038/nmat1387
18. Cohen, D. J.; Barnett, S. A. Predicted electrical properties of modulation-doped ZnO-based transparent conducting oxides J. Appl. Phys. 2005, 98, 053705 10.1063/1.2035898
19. Wang, Z. L.; Song, J. Piezoelectric nanogenerators based on zinc oxide nanowire arrays Science 2006, 312, 242-246 10.1126/science.1124005
20. Tynell, T.; Karppinen, M. Atomic layer deposition of ZnO: A review Semicond. Sci. Technol. 2014, 29, 043001 10.1088/0268-1242/29/4/043001
21. Miikkulainen, V.; Leskelä, M.; Ritala, M.; Puurunen, R. L. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends J. Appl. Phys. 2013, 113, 021301 10.1063/1.4757907
22. Lin, Y.-T.; Chung, P.-H.; Lai, H.-W.; Su, H.-L.; Lyu, D.-Y.; Yen, K.-Y.; Lin, T.-Y.; Kung, C.-Y.; Gong, J.-R. Self-limiting growth of ZnO films on (0001) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide Appl. Surf. Sci. 2009, 256, 819-822 10.1016/j.apsusc.2009.08.067
23. Zhuravlev, L. T. The surface chemistry of amorphous silica. Zhuravlev model Colloids Surf., A 2000, 173, 1-38 10.1016/S0927-7757(00)00556-2
24. http://www.sil-tronix-st.com.
25. http://global.kyocera.com.
26. 3 (0001) interfaces Surf. Sci. 2006, 600, 4870-4877 10.1016/j.susc.2006.08.008
27. Rauch, E. F.; Veron, M. Coupled microstructural observations and local texture measurements with an automated crystallographic orientation mapping tool attached to a TEM Materialwiss. Werkstofftech. 2005, 36, 552-556 10.1002/mawe.200500923
28. Liu, C. H.; Yan, M.; Liu, X.; Seelig, E.; Chang, R. Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method Chem. Phys. Lett. 2002, 355, 43-47 10.1016/S0009-2614(02)00162-8
29. Puurunen, R. L. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process J. Appl. Phys. 2005, 97, 121301 10.1063/1.1940727
30. Baji, Z.; Lábadi, Z.; Horváth, Z. E.; Molnár, G.; Volk, J.; Bársony, I.; Barna, P. Nucleation and Growth Modes of ALD ZnO Cryst. Growth Des. 2012, 12, 5615-5620 10.1021/cg301129v
31. Patterson, A. L. The Scherrer formula for X-ray particle size determination Phys. Rev. 1939, 56, 978-982 10.1103/PhysRev.56.978
32. Iwanaga, H.; Kunishige, A.; Takeuchi, S. Anisotropic thermal expansion in wurtzite-type crystals J. Mater. Sci. 2000, 35, 2451-2454 10.1023/A:1004709500331
33. Nix, W. D.; Clemens, B. M. Crystallite coalescence: A mechanism for intrinsic tensile stresses in thin films J. Mater. Res. 1999, 14, 3467-3473 10.1557/JMR.1999.0468
34. Li, X.; Wang, Y.; Liu, W.; Jiang, G.; Zhu, C. Study of oxygen vacancies' influence on the lattice parameter in ZnO thin film Mater. Lett. 2012, 85, 25-28 10.1016/j.matlet.2012.06.107
35. x films: control of self-texture J. Cryst. Growth 1993, 130, 269-279 10.1016/0022-0248(93)90861-P
36. Kajikawa, Y. Texture development of non-epitaxial polycrystalline ZnO films J. Cryst. Growth 2006, 289, 387-394 10.1016/j.jcrysgro.2005.11.089
37. Fons, P.; Iwata, K.; Yamada, A.; Matsubara, K.; Niki, S.; Nakahara, K.; Tanabe, T.; Takasu, H. Uniaxial locked epitaxy of ZnO on the a face of sapphire Appl. Phys. Lett. 2000, 77, 1801 10.1063/1.1311603
38. Ohkubo, I.; Matsumoto, Y.; Ohtomo, A.; Ohnishi, T.; Tsukazaki, A.; Lippmaa, M.; Koinuma, H.; Kawasaki, M. Investigation of ZnO/sapphire interface and formation of ZnO nanocrystalline by laser MBE Appl. Surf. Sci. 2000, 159-160, 514-519 10.1016/S0169-4332(00)00138-0
39. Nakahara, K.; Takasu, H.; Fons, P.; Iwata, K.; Yamada, A.; Matsubara, K.; Hunger, R.; Niki, S. Growth and characterization of undoped ZnO films for single crystal based device use by radical source molecular beam epitaxy (RS-MBE) J. Cryst. Growth 2001, 227-228, 923-928 10.1016/S0022-0248(01)00929-0
40. Du, X. L.; Murakami, M.; Iwaki, H.; Yoshikawa, A. Complete Elimination of Multiangle Rotation Domains in ZnO Epilayers Grown on (0001) Sapphire Substrate Phys. Status Solidi A 2002, 192, 183-188 10.1002/1521-396X(200207)192:1<183::AID-PSSA183>3.0.CO;2-K
41. Akiyama, S.; Minegishi, K.; Tanaka, T.; Ogawa, H.; Kasuga, M. Effects of Sapphire Substrate Preparation on ZnO Epitaxial Growth by Atmospheric-Pressure Metal Organic Chemical Vapor Deposition Jpn. J. Appl. Phys. 2007, 46, 342-344 10.1143/JJAP.46.342
42. Yang, S.; Lin, B. H.; Liu, W. R.; Lin, J. H.; Chang, C. S.; Hsu, C. H.; Hsieh, W. F. Structural Characteristics and Annealing Effect of ZnO Epitaxial Films Grown by Atomic Layer Deposition Cryst. Growth Des. 2009, 9, 5184-5189 10.1021/cg900580r
43. Kitamura, M.; Haydn, C. Calculation of the K-absorption edge and its chemical shift of common metals J. Phys. Chem. Solids 1991, 52, 731-734 10.1016/0022-3697(91)90175-Y
44. Al-Ebraheem, A.; Goettlicher, J.; Geraki, K.; Ralph, S.; Farquharson, M. J. The determination of zinc, copper and iron oxidation state in invasive ductal carcinoma of breast tissue and normal surrounding tissue using XANES X-Ray Spectrom. 2010, 39, 332-337 10.1002/xrs.1272
45. Wander, A.; Schedin, F.; Steadman, P.; Norris, A.; McGrath, R.; Turner, T.; Thornton, G.; Harrison, N. Stability of Polar Oxide Surfaces Phys. Rev. Lett. 2001, 86, 3811-3814 10.1103/PhysRevLett.86.3811
46. Claeyssens, F.; Freeman, C. L.; Allan, N. L.; Sun, Y.; Ashfold, M. N. R.; Harding, J. H. Growth of ZnO thin films-Experiment and theory J. Mater. Chem. 2005, 15, 139 10.1039/b414111c
47. Noguera, C.; Goniakowski, J. Polarity in Oxide Nano-objects Chem. Rev. 2013, 113, 4073-4105 10.1021/cr3003032
48. Nicolay, S.; Faÿ, S.; Ballif, C. Growth Model of MOCVD Polycrystalline ZnO Cryst. Growth Des. 2009, 9, 4957-4962 10.1021/cg900732h
49. Hass, K. C.; Schneider, W. F.; Curioni, A.; Andreoni, W. The chemistry of water on alumina surfaces: Reaction dynamics from first principles Science 1998, 282, 265-268 10.1126/science.282.5387.265
50. 3(0001)-(1 × 1) surfaces Phys. Rev. B: Condens. Matter Mater. Phys. 1999, 60, R16287-R16290 10.1103/PhysRevB.60.R16287
51. Ren, J. Initial growth mechanism of atomic layer deposition of ZnO on the hydroxylated Si(100)-2 × 1: A density functional theory study Appl. Surf. Sci. 2009, 255, 5742-5745 10.1016/j.apsusc.2008.12.077
52. Wang, Z. L. Nanostructures of zinc oxide Mater. Today 2004, 7, 26-33 10.1016/S1369-7021(04)00286-X
53. Shi, R.; Song, X.; Li, J.; Yang, P. Hierarchical ZnO with twinned structure: Morphology evolution, formation mechanism and properties Mater. Chem. Phys. 2015, 156, 61-68 10.1016/j.matchemphys.2015.02.020