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Volumn 46, Issue 1, 2007, Pages 342-344

Effects of sapphire substrate preparation on ZnO epitaxial growth by atmospheric-pressure metal organic chemical vapor deposition

Author keywords

Annealing; Coincidence site lattice; Epitaxy; MOCVD; Rotational domains; Sapphire; X ray diffraction; ZnO

Indexed keywords

ANNEALING; PRESSURE EFFECTS; SAPPHIRE; X RAY DIFFRACTION ANALYSIS;

COINCIDENCE SITE LATTICE; ROTATIONAL DOMAINS;

EPITAXIAL GROWTH;

EID: 34547861334 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.342 Document Type: Article

Times cited : (17)

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