Study of oxygen vacancies′ influence on the lattice parameter in ZnO thin film

Materials Letters

Volumn 85, Issue , 2012, Pages 25-28

  Li, Xinyi ^a,b   Wang, Yunlan ^a,b   Liu, Weifeng ^a,b   Jiang, Guoshun ^a,b   Zhu, Changfei ^a,b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Oxygen vacancy; Thin film; XPS; ZnO

Indexed keywords

ANNEALING PROCESS; IN-VACUUM; OXYGEN ATMOSPHERE; OXYGEN VACANCY CONCENTRATION; PEAK SHIFT; RELATIVE INTENSITY; VALENCE STATE; XRD; ZN ATOMS; ZNO; ZNO FILMS; ZNO THIN FILM;

ANNEALING; LATTICE CONSTANTS; METALLIC FILMS; OPTICAL FILMS; OXYGEN; THIN FILMS; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

OXYGEN VACANCIES;

EID: 84865094128     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2012.06.107     Document Type: Article

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