SCOPUS 정보 검색 플랫폼

ChemSusChem

Volumn 9, Issue 1, 2016, Pages 109-117

Electric and Photoelectric Properties of 3,4-Ethylenedioxythiophene-Functionalized n-Si/PEDOT:PSS Junctions

(3) Giesbrecht, Patrick K a,b,c Bruce, Jared P a,b,c Freund, Michael S a,b,c

a UNIVERSITY OF MANITOBA (Canada)

b UNIVERSITY OF CALIFORNIA (United States)

c Florida Institute of Technology ^* (United States)

Author keywords

conducting materials; photoelectron spectroscopy; photophysics; semiconductors; silicon

Indexed keywords

CONDUCTING POLYMERS; HOLE MOBILITY; INTERFACE STATES; OPEN CIRCUIT VOLTAGE; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; PHOTOSYNTHETIC MEMBRANES; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; THIOPHENE;

3 ,4 ETHYLENEDIOXYTHIOPHENE (EDOT); 3 ,4-ETHYLENEDIOXYTHIOPHENE; CONDUCTING MATERIALS; CONDUCTING POLYMER MEMBRANES; PHOTOELECTRIC PROPERTY; PHOTOPHYSICS; PHOTOSYNTHETIC DEVICES; POLY(STYRENE SULFONATE);

X RAY PHOTOELECTRON SPECTROSCOPY;

3,4-ETHYLENEDIOXYTHIOPHENE; NANOWIRE; POLY(3,4-ETHYLENEDIOXYTHIOPHENE)-POLY(STYRENESULFONATE); POLYSTYRENE DERIVATIVE; SILICON; THIOPHENE DERIVATIVE;

CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTRODE; LIGHT; POWER SUPPLY; SURFACE PROPERTY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRIC CONDUCTIVITY; ELECTRIC POWER SUPPLIES; ELECTRODES; LIGHT; NANOWIRES; PHOTOELECTRON SPECTROSCOPY; POLYSTYRENES; SILICON; SURFACE PROPERTIES; THIOPHENES;

EID: 84954076468 PISSN: 18645631 EISSN: 1864564X Source Type: Journal
DOI: 10.1002/cssc.201501231 Document Type: Article

Times cited : (8)

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