Electrical junction behavior of Poly(3,4-ethylenedioxythiophene) (PEDOT) contacts to H-terminated and CH3-Terminated p-, n-, and n +-Si(111) surfaces

Journal of Physical Chemistry C

Volumn 117, Issue 28, 2013, Pages 14485-14492

  Walter, Michael G ^a   Liu, Xueliang ^a   O'Leary, Leslie E ^a   Brunschwig, Bruce S ^a   Lewis, Nathan S ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARTIFICIAL PHOTOSYNTHETIC SYSTEMS; CONTACT SYSTEMS; ELECTRICAL JUNCTIONS; H-TERMINATED SI SURFACES; LOW-RESISTANCE CONTACTS; PHOTOVOLTAIC PROPERTY; POLY(3 ,4 ETHYLENEDIOXYTHIOPHENE) (PEDOT); SURFACE FUNCTIONALIZATION;

CONDUCTING POLYMERS; ELECTRIC PROPERTIES; OHMIC CONTACTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON;

SEMICONDUCTING SILICON;

EID: 84880559529     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp4018162     Document Type: Article

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