Universality of non-Ohmic shunt leakage in thin-film solar cells

Journal of Applied Physics

Volumn 108, Issue 12, 2010, Pages

  Dongaonkar, S ^a   Servaites, J D ^b   Ford, G M ^a   Loser, S ^c   Moore, J ^a   Gelfand, R M ^b   Mohseni, H ^b   Hillhouse, H W ^a   Agrawal, R ^a   Ratner, M A ^b,c   Marks, T J ^b,c   Lundstrom, M S ^a   Alam, M A ^a  

^a PURDUE UNIVERSITY   (United States)

^b Northwestern University   (United States)

^c NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK HETEROJUNCTION; CU(IN , GA)SE; DARK CURRENT-VOLTAGE; FORWARD BIAS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); MEASURED DATA; NONOHMIC BEHAVIOR; OHMIC SHUNTS; P-I-N CELLS; PHOTOVOLTAICS; POWER LAW; REVERSE BIAS; SHUNT CURRENT; SHUNT RESISTANCES; SIMPLE METHOD; SPACE CHARGE LIMITED CURRENTS; TEMPERATURE DEPENDENCE; THIN-FILM SOLAR CELLS; VOLTAGE DEPENDENCE;

AMORPHOUS FILMS; AMORPHOUS SILICON; BIAS VOLTAGE; COPPER; GALLIUM; HETEROJUNCTIONS; PARAMETER EXTRACTION; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78650889474     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3518509     Document Type: Article

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