Real-space imaging of atomic arrangement and vacancy layers ordering in laser crystallised Ge2Sb2Te5 phase change thin films

Acta Materialia

Volumn 105, Issue , 2016, Pages 1-8

  Lotnyk, Andriy ^a   Bernütz, Sabine ^a   Sun, Xinxing ^a   Ross, Ulrich ^a   Ehrhardt, Martin ^a   Rauschenbach, Bernd ^a  

^a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

Author keywords

Cs corrected STEM; Phase change materials; Thin films; Vacancy layer

Indexed keywords

AMORPHOUS FILMS; ANTIMONY; ATOMS; CESIUM; ELECTRON BEAMS; FILMS; GERMANIUM; GRAIN BOUNDARIES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IRRADIATION; SCANNING ELECTRON MICROSCOPY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES;

ABERRATION-CORRECTED SCANNING TRANSMISSION ELECTRON MICROSCOPIES; AMORPHOUS COMPONENT; ATOMIC ARRANGEMENT; FOCUSED ELECTRON BEAMS; INTRINSIC VACANCIES; PHASE CHANGE MECHANISMS; PHASE CHANGE THIN FILMS; STRUCTURE MODELING;

PHASE CHANGE MATERIALS;

EID: 84951745825     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2015.12.010     Document Type: Article

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