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Volumn 95, Issue 3, 2004, Pages 924-932

In situ transmission electron microscopy study of the crystallization of Ge2Sb2Te5

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTAL STRUCTURE; CRYSTALLIZATION; CURRENT DENSITY; ELECTRON BEAMS; ELECTRON IRRADIATION; ENERGY DISPERSIVE SPECTROSCOPY; GRAIN GROWTH; OXIDATION; SCANNING ELECTRON MICROSCOPY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 1142280320     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1636259     Document Type: Article
Times cited : (179)

References (31)
  • 19
    • 18644365835 scopus 로고    scopus 로고
    • B. J. Kooi and J. T. M. De Hosson, J. Appl. Phys. 92, 3584 (2002); Note that twice (in the caption of Fig. 1 and in Sec. V, erroneously the value 1.827 nm is given for the c-lattice constant instead of the correct value 1.727 nm.
    • (2002) J. Appl. Phys. , vol.92 , pp. 3584
    • Kooi, B.J.1    De Hosson, J.T.M.2
  • 28
    • 0002586444 scopus 로고
    • edited by J. J. Hren, J. I. Goldstein, and D. C. Joy (Plenum, New York)
    • L. W. Hobbs, Introduction to Analytical Electron Microscopy, edited by J. J. Hren, J. I. Goldstein, and D. C. Joy (Plenum, New York, 1979), p. 437.
    • (1979) Introduction to Analytical Electron Microscopy , pp. 437
    • Hobbs, L.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.