Disorder-induced localization in crystalline phase-change materials

Nature Materials

Volumn 10, Issue 3, 2011, Pages 202-208

  Siegrist, T ^a,b   Jost, P ^a   Volker, H ^a   Woda, M ^a   Merkelbach, P ^a   Schlockermann, C ^a   Wuttig, M ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FAMU FSU COLLEGE OF ENGINEERING   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; DATA STORAGE EQUIPMENT; DIGITAL STORAGE; ELECTRON CORRELATIONS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; METALS; QUANTUM THEORY; SEMICONDUCTOR INSULATOR BOUNDARIES; VIRTUAL STORAGE;

ANDERSON LOCALIZATION; ANNEALING TEMPERATURES; CRYSTALLINE SOLIDS; DEGREE OF DISORDER; NONVOLATILE MEMORY DEVICES; QUANTUM STATE OF MATTERS; REPRODUCIBILITIES; RESISTANCE SWITCHING;

PHASE CHANGE MATERIALS;

EID: 79951871293     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat2934     Document Type: Article

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