Stress-induced high-field gate leakage current in ultra-thin gate oxide

Solid-State Electronics

Volumn 44, Issue 6, 2000, Pages 977-980

  Wei, Jianlin ^a   Mao, Lingfeng ^a   Xu, Mingzhen ^a   Tan, Changhua ^a   Duan, Xiaorong ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); LEAKAGE CURRENTS; THIN FILMS;

STRESS-INDUCED LEAKAGE CURRENT (SILC); ULTRA-THIN GATE OXIDES;

MOSFET DEVICES;

EID: 0033736815     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00008-3     Document Type: Article

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