Modeling the conduction characteristics of broken down gate oxides in MOS structures

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1599-1603

  Miranda, E ^a   Sune J ^b  

^a UNIVERSIDAD DE BUENOS AIRES   (Argentina)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000172462     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(00)00176-1     Document Type: Article

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