Physical model for high indium content InGaN/GaN self-assembled quantum dot ridge-waveguide lasers emitting at red wavelengths (λ ∼ 630 nm)

Optics Express

Volumn 23, Issue 10, 2015, Pages 12850-12865

  Su, Guan Lin ^a   Frost, Thomas ^b   Bhattacharya, Pallab ^b   Dallesasse, John M ^a  

^a United States of America   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM; INTERFACE STATES; INTERFACES (MATERIALS); NANOCRYSTALS; QUANTUM DOT LASERS; SEMICONDUCTOR QUANTUM DOTS; SHRINKFITTING; WAVEGUIDES;

CURRENT INJECTIONS; HIGH INDIUM CONTENTS; LINEAR ELASTIC THEORY; MATERIAL INTERFACES; OPTICAL CHARACTERISTICS; RIDGE WAVEGUIDE LASERS; SELF ASSEMBLED QUANTUM DOTS; STRAIN DISTRIBUTIONS;

RIDGE WAVEGUIDES;

EID: 84946594225     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.23.012850     Document Type: Article

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