Quantum confined Stark effect in single self-assembled GaN/AlN quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 148-151

  Nakaoka, T ^a   Kako, S ^b   Arakawa, Y ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

GaN; Photoluminescence; Quantum confined Stark effect; Quantum dots

Indexed keywords

BINDING ENERGY; ELECTRIC FIELDS; PIEZOELECTRIC DEVICES; SELF ASSEMBLY; STRAIN;

EMISSION ENERGY; GAN; PYROELECTRIC CHARGE; QUANTUM CONFINED STARK EFFECT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646169819     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.028     Document Type: Article

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