Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wells

Semiconductor Science and Technology

Volumn 16, Issue 5, 2001, Pages 406-412

  Vehse, M ^a   Michler, P ^a   Gutowski, J ^a   Figge, S ^a   Hommel, D ^a   Selke, H ^a   Keller, S ^b   DenBaars, S P ^b  

^a UNIVERSITY OF BREMEN   (Germany)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPOSITION EFFECTS; CRYSTAL STRUCTURE; GALLIUM NITRIDE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTOR DOPING; TEMPERATURE MEASUREMENT;

BAND TO BAND TRANSITIONS; CRYSTAL QUALITY; NONRADIATIVE RECOMBINATION CHANNEL; OPTICAL GAIN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035326793     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/5/322     Document Type: Article

References (25)