Continuous-wave operation and differential gain of InGaN/GaN quantum dot ridge waveguide lasers (λ = 420 nm) on c-plane GaN substrate

Applied Physics Letters

Volumn 101, Issue 4, 2012, Pages

  Banerjee, Animesh ^a   Frost, Thomas ^a   Stark, Ethan ^a   Bhattacharya, Pallab ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS OPERATION; BLUE SHIFT; BLUE-EMITTING; CONTINUOUS WAVE; CONTINUOUS WAVE OPERATION; DIFFERENTIAL GAIN; EMISSION WAVELENGTH; GAN SUBSTRATE; INGAN/GAN; OUTPUT CHARACTERISTICS; PIEZO-ELECTRIC FIELDS; RADIATIVE LIFETIME; RIDGE WAVEGUIDE LASERS; ROOM TEMPERATURE; TEMPERATURE DEPENDENT; TIME-RESOLVED PHOTOLUMINESCENCE; WALLPLUG EFFICIENCY;

GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; RIDGE WAVEGUIDES; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84864454023     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4738499     Document Type: Article

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