Analysis of temperature-dependent optical gain in GaN-InGaN quantum-well structures

IEEE Photonics Technology Letters

Volumn 18, Issue 15, 2006, Pages 1600-1602

  Witzigmann, B ^a   Laino, V ^a   Luisier, M ^a   Schwarz, U T ^b   Fischer, H ^b   Feicht, G ^b   Wegscheider, W ^b   Rumbolz, C ^c   Lell, A ^c   Harle V ^c  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF REGENSBURG   (Germany)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

InGaN GaN laser diode (LD); Inhomogeneous broadening; Microscopic gain model; Optical gain

Indexed keywords

COMPOSITIONAL FLUCTUATIONS; DEPHASING; DRIVE CURRENTS; FIT PARAMETERS; GAIN MODELS; GAIN SPECTRA; GAN LASER DIODES; HOMOGENEOUS BROADENING; INHOMOGENEOUS BROADENING; MICROSCOPIC GAIN MODEL; MULTIPLE QUANTUM-WELL STRUCTURES; QUANTUM WELL STRUCTURES; SINGLE-VALUE; SPECTRAL GAIN; STRUCTURAL MEASUREMENTS; TEMPERATURE DEPENDENT; TEMPERATURE RANGE;

GALLIUM ALLOYS; HETEROJUNCTIONS; OPTICAL GAIN; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDE;

EID: 34248676604     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.879565     Document Type: Article

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