Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance

ACS Applied Materials and Interfaces

Volumn 7, Issue 42, 2015, Pages 23589-23596

  Khalil, Hafiz M W ^a   Khan, Muhammad Farooq ^a   Eom, Jonghwa ^a   Noh, Hwayong ^a  

^a Sejong University   (South Korea)

Author keywords

contact resistance; DUV; Schottky barrier; TLM; TMDs; WS2

Indexed keywords

CHEMICAL RESISTANCE; CONTACT RESISTANCE; DOPING (ADDITIVES); DRAIN CURRENT; MULTILAYERS; OPTOELECTRONIC DEVICES; SCHOTTKY BARRIER DIODES; THRESHOLD VOLTAGE; TRANSITION METALS;

DUV; FIELD EFFECT TRANSISTOR (FETS); SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; TLM; TMDS; TRANSFER LENGTH METHODS; TRANSITION METAL DICHALCOGENIDES;

FIELD EFFECT TRANSISTORS;

EID: 84946069571     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b06825     Document Type: Article

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