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Volumn 7, Issue 2, 2015, Pages 747-757

Deep-ultraviolet-light-driven reversible doping of WS2 field-effect transistors

(6) Iqbal, Muhammad Waqas a Iqbal, Muhammad Zahir a Khan, Muhammad Farooq a Shehzad, Muhammad Arslan a Seo, Yongho a Eom, Jonghwa a

a Sejong University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC FIELD EFFECTS; OPTOELECTRONIC DEVICES; PHOTOELECTRICITY; THRESHOLD VOLTAGE;

DEEP ULTRAVIOLET; DOPING TECHNIQUES; GAS ENVIRONMENT; LIGHT ILLUMINATION; NEGATIVE GATE VOLTAGES; NITROGEN ENVIRONMENT; PHOTOCURRENT RESPONSE; PHOTOELECTRIC CHARACTERISTICS;

FIELD EFFECT TRANSISTORS;

EID: 84916910297 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c4nr05129g Document Type: Article

Times cited : (65)

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