High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films

Scientific Reports

Volumn 5, Issue , 2015, Pages

  Iqbal, M Waqas ^a   Iqbal, M Zahir ^a   Khan, M Farooq ^a   Shehzad, M Arslan ^a   Seo, Yongho ^a   Park, Jong Hyun ^b   Hwang, Chanyong ^c   Eom, Jonghwa ^a  

^a Sejong University   (South Korea)

^b Chungnam National University   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84934880875     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep10699     Document Type: Article

References (30)

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