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Applied Physics Letters

Volumn 104, Issue 17, 2014, Pages

Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors

(5) Ubrig, Nicolas a Jo, Sanghyun a Berger, Helmuth b Morpurgo, Alberto F a Kuzmenko, Alexey B a

a UNIVERSITY OF GENEVA (Switzerland)

b EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; IONIC LIQUIDS; PHOTOCURRENTS;

AMBIPOLAR TRANSPORT; DOPING DEPENDENCE; ELECTRON ACCUMULATION; ELECTRON-HOLE ASYMMETRY; ELECTRONS AND HOLES; PHOTOCURRENT DECAY; SCANNING PHOTOCURRENT MICROSCOPIES; SCHOTTKY-BARRIER DEVICES;

ELECTRONS;

EID: 84899889160 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4872002 Document Type: Article

Times cited : (43)

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